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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Experimental research on the damage effect of HPM on semiconductor bipolar transistor

✍ Scribed by You, Hailong; Fan, Juping; Jia, Xinzhang; Zhang, Ling

Book ID: 120208142
Publisher: IEEE
Year: 2010
Weight: 408 KB
Category: Article
ISBN: 1424457971
DOI: 10.1109/ICSICT.2010.5667381

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