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[IEEE 2009 IEEE International Solid-State Circuits Conference (ISSCC 2009) - San Francisco, CA (2009.02.8-2009.02.12)] 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers - A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management

✍ Scribed by Wang, Y.; Bhattacharya, U.; Hamzaoglu, F.; Kolar, P.; Ng, Y.; Wei, L.; Zhang, Y.; Zhang, K.; Bohr, M.

Book ID: 120302541
Publisher: IEEE
Year: 2009
Weight: 634 KB
Category: Article
ISBN: 1424434580
DOI: 10.1109/ISSCC.2009.4977505

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