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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

✍ Scribed by Uemoto, Yasuhiro; Morita, Tatsuo; Ikoshi, Ayanori; Umeda, Hidekazu; Matsuo, Hisayoshi; Shimizu, Jun; Hikita, Masahiro; Yanagihara, Manabu; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

Book ID: 126052002
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 384 KB
Category: Article
ISBN: 1424456398
DOI: 10.1109/IEDM.2009.5424397

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