[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process

✍ Scribed by Ando, T.; Frank, M. M.; Choi, K.; Choi, C.; Bruley, J.; Hopstaken, M.; Copel, M.; Cartier, E.; Kerber, A.; Callegari, A.; Lacey, D.; Brown, S.; Yang, Q.; Narayanan, V.

• Book ID: 120067616
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 633 KB
• Category: Article
• ISBN: 1424456398
• DOI: 10.1109/IEDM.2009.5424335