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[IEEE 2009 6th International Multi-Conference on Systems, Signals and Devices (SSD) - Djerba, Tunisia (2009.03.23-2009.03.26)] 2009 6th International Multi-Conference on Systems, Signals and Devices - Analytical modeling of the tunneling current in Schottky barrier carbon nanotube field effect transistor using the Verilog-A language

✍ Scribed by Najari, M.; Fregonese, S.; Maneux, C.; Zimmer, T.; Mnif, H.; Masmoudi, N.

Book ID: 120004433
Publisher: IEEE
Year: 2009
Weight: 967 KB
Category: Article
ISBN: 1424443458
DOI: 10.1109/SSD.2009.4956817

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