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[IEEE 2009 4th International Design and Test Workshop (IDT) - Riyadh, Saudi Arabia (2009.11.15-2009.11.17)] 2009 4th International Design and Test Workshop (IDT) - Modeling of gate oxide short defects in MOSFETS

✍ Scribed by Chehade, Sarah; Chehab, Ali; Kayssi, Ayman

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