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[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Correlation of fin shape fluctuations to FinFET electrical variability and noise margins of 6-T SRAM cells

✍ Scribed by Baravelli, Emanuele; De Marchi, Luca; Jurczak, Malgorzata; Speciale, Nicolo

Book ID: 121246772
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 874 KB
Category: Article
ISBN: 1424437040
DOI: 10.1109/ULIS.2009.4897529

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