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[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - 2D simulation of gate currents in MOSFETs: Comparison between S-Device and the quantum mechanical simulator GreenSolver

✍ Scribed by Schenk, Andreas; Luisier, Mathieu M.

Book ID: 127229068
Publisher: IEEE
Year: 2008
Weight: 633 KB
Category: Article
ISBN: 1424417538
DOI: 10.1109/sispad.2008.4648297

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