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[IEEE 2008 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Nanjing, China (2008.04.21-2008.04.24)] 2008 International Conference on Microwave and Millimeter Wave Technology - 6H-SiC lateral power MOSFETs with an asymmetrical buried oxide double step structure

✍ Scribed by Sharbati, Samaneh; Orouji, Ali A.; Fathipour, M.

Book ID: 118269020
Publisher: IEEE
Year: 2008
Weight: 439 KB
Volume: 0
Category: Article
ISBN: 1424418798
DOI: 10.1109/icmmt.2008.4540692

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