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[IEEE 2008 International Conference on Electrical and Computer Engineering - Dhaka, Bangladesh (2008.12.20-2008.12.22)] 2008 International Conference on Electrical and Computer Engineering - The effects of doping, gate length, and gate dielectric on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire transistor

✍ Scribed by Bhowmick, Sishir; Alam, Khairul; Quazi Deen Mohd Khosru,

Book ID: 120819926
Publisher: IEEE
Year: 2008
Weight: 962 KB
Category: Article
ISBN: 1424420148
DOI: 10.1109/ICECE.2008.4769216

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