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[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Simulation of Influence of AlGaN/GaN Heterojunction Parameters on Its Capacitance Curves

✍ Scribed by Osvald, J.

Book ID: 118007482
Publisher: IEEE
Year: 2008
Weight: 199 KB
Volume: 0
Category: Article
ISBN: 1424423252
DOI: 10.1109/asdam.2008.4743348

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