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[IEEE 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, China (2008.12.8-2008.12.10)] 2008 IEEE International Conference on Electron Devices and Solid-State Circuits - InGaAs and graphene as high mobility channels for post Si-CMOS applications

✍ Scribed by Ye, Peide D.

Book ID: 121321002
Publisher: IEEE
Year: 2008
Weight: 512 KB
Category: Article
ISBN: 1424425395
DOI: 10.1109/EDSSC.2008.4760751

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