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[IEEE 2008 IEEE International Conference on Electro/Information Technology (EIT 2008) - Ames, IA, USA (2008.05.18-2008.05.20)] 2008 IEEE International Conference on Electro/Information Technology - Charged based MOS transistor modeling in weak inversion

✍ Scribed by Bhatti, Tamkeen. M.; Bhatti, F.A.

Book ID: 120078227
Publisher: IEEE
Year: 2008
Weight: 357 KB
Category: Article
ISBN: 1424420296
DOI: 10.1109/EIT.2008.4554317

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