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[IEEE 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Monterey, CA (2008.10.13-2008.10.15)] 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Demonstration of a 270 GHz fT SiGe-C HBT within a manufacturing-proven 0.18μm BiCMOS process without the use of a raised extrinsic base

✍ Scribed by Preisler, Edward; Lanzerotti, Louis; Hurwitz, Paul D.; Racanelli, Marco

Book ID: 121315583
Publisher: IEEE
Year: 2008
Weight: 461 KB
Category: Article
ISBN: 1424427258
DOI: 10.1109/BIPOL.2008.4662728

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