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[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Large current enhancement in n-MOSFETs with strained Si on insulator

✍ Scribed by Mantl, S.; Buca, D.; Zhao, Q. T.; Hollander, B.; Feste, S.; Luysberg, M.; Reiche, M.; Gosele, U.; Buchholtz, W.; Wei, A.; Horstmann, M.; Loo, R.; Nguyen, D.

Book ID: 125525326
Publisher: IEEE
Year: 2007
Weight: 315 KB
Category: Article
ISBN: 1424418925
DOI: 10.1109/ISDRS.2007.4422442

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