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[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - VFB Roll-off in HfO2 Gate Stack after High Temperature Annealing Process - A Crucial Role of Out-diffused Oxygen from HfO2 to Si

✍ Scribed by Akiyama, K.; Wang, W.; Mizubayashi, W.; Ikeda, M.; Ota, H.; Nabatame, T.; Toriumi, A.


Book ID
126670108
Publisher
IEEE
Year
2007
Weight
494 KB
Category
Article
ISBN
4900784036

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