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[IEEE 2007 IEEE Compound Semiconductor Integrated Circuits Symposium - Portland, OR, USA (2007.10.14-2007.10.17)] 2007 IEEE Compound Semiconductor Integrated Circuits Symposium - A Classic Nonlinear FET Model for GaN HEMT Devices

✍ Scribed by Kharabi, F.; Poulton, M. J.; Halchin, D.; Green, D.

Book ID: 121288397
Publisher: IEEE
Year: 2007
Weight: 414 KB
Category: Article
ISBN-13: 9781424410231
DOI: 10.1109/CSICS07.2007.30

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