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[IEEE 2006 Ph.D. Research in Microelectronics and Electronics - Otranto, Italy (12-15 June 2006)] 2006 Ph.D. Research in Microelectronics and Electronics - High-quality MOCVD AlGaN/GaN structure for HEMT applications

โœ Scribed by Poti, B.; Passaseo, A.; De Vittorio, M.; Peroni, M.; Cetronio, A.; Romanini, P.


Book ID
126727722
Publisher
IEEE
Year
2006
Weight
239 KB
Category
Article
ISBN-13
9781424401574

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