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[IEEE 2006 IEEE International Conference on Semiconductor Electronics - Kuala Lumpur, Malaysia (2006.10.29-2006.12.1)] 2006 IEEE International Conference on Semiconductor Electronics - Device Characteristics of HEMT Structures based on Backgate Contact Method

✍ Scribed by Idham, M Norman Fadhil; Afzan, O Nurul; Soetedjo, Hariyadi; Ismat, A.R. Ahmad; Sabtu, Idris; Razman, Y. Mohamed; Fatah, A.M. Abdul

Book ID: 120642675
Publisher: IEEE
Year: 2006
Weight: 912 KB
Category: Article
ISBN-13: 9780780397316
DOI: 10.1109/SMELEC.2006.380733

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