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[IEEE 2006 13th IEEE International Conference on Electronics, Circuits and Systems - Nice, France (2006.12.10-2006.12.13)] 2006 13th IEEE International Conference on Electronics, Circuits and Systems - A New RF SiCMOS SDD Model for Quantifying Individual Contribution to Distortion from Transistor's Nonlinear Parameters

✍ Scribed by Abuelmaatti, Ali; Thayne, Iain

Book ID: 121831455
Publisher: IEEE
Year: 2006
Weight: 458 KB
Category: Article
ISBN-13: 9781424403950
DOI: 10.1109/ICECS.2006.379667

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