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[IEEE 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks - Singapore (2005.11.30-2005.12.2)] 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks - Relation between RF noise and gate oxide breakdown location in deep submicron NMOSFETs

✍ Scribed by Rong Zeng, ; Hong Wang,

Book ID: 126633925
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 723 KB
Category: Article
ISBN-13: 9780780393721
DOI: 10.1109/RFIT.2005.1598890

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