[IEEE 2002 IEEE Nuclear Science Symposium Conference Record - Norfolk, VA, USA (10-16 Nov. 2002)] 2002 IEEE Nuclear Science Symposium Conference Record - Noise behavior of MOSFETs fabricated in 0.5 μm fully-depleted (FD) silicon-on-sapphire (SOS) CMOS in weak, moderate,, and strong inversion

✍ Scribed by Ericson, M.N.; Britton, C.L.; Rochelle, J.M.; Blalock, B.J.; Binkley, D.M.; Wintenberg, A.L.; Williamson, B.D.

• Book ID: 111680341
• Publisher: IEEE
• Year: 2003
• Weight: 808 KB
• Volume: 1
• Category: Article
• ISBN-13: 9780780376366
• DOI: 10.1109/nssmic.2002.1239282