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[IEEE 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 - Vienna, Austria (15-16 Nov. 2001)] 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567) - A measurement based gate current model for GaAs MESFET's and HEMT's including self-heating and impact ionization

โœ Scribed by Smely, D.; Mayer, M.; Magerl, G.


Book ID
121739436
Publisher
IEEE
Year
2001
Tongue
English
Weight
504 KB
Category
Article
ISBN-13
9780780370494

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