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[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - Strain energy band engineering approach to AlN/GaN/InN heterojunction devices

✍ Scribed by Shur, M.S.; Gaska, R.; Yang, J.W.; Simin, G.; Khan, A.

Book ID: 111978192
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 468 KB
Volume: 0
Category: Article
ISBN-13: 9780780374324
DOI: 10.1109/isdrs.2001.984539

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