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[IEEE 2000 IEEE International Symposium on Compound Semiconductors Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors - Monterey, CA, USA (2-5 Oct. 2000)] 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498) - Effect of passivation on AlGaN/GaN HEMT device performance

✍ Scribed by Tilak, V.; Green, B.; Kim, H.; Dimitrov, R.; Smart, J.; Schaff, W.J.; Shealy, J.R.; Eastman, L.F.

Book ID: 121738354
Publisher: IEEE
Year: 2000
Weight: 316 KB
Edition: 1999
Category: Article
ISBN-13: 9780780362581
DOI: 10.1109/ISCS.2000.947182

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