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[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (11-15 Aug. 1997)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C - Optical properties of InGaN double heterostructures and quantum wells grown by metalorganic chemical vapor deposition

✍ Scribed by Dupuis, R.D.; Grudowski, P.A.; Eiting, C.J.; Park, J.; Shelton, B.S.; Lambert, D.J.H.; Shmagin, I.; Kolbas, R.M.

Book ID: 126754137
Publisher: IEEE
Year: 1997
Weight: 160 KB
Category: Article
ISBN-13: 9780780338913
DOI: 10.1109/LEOSST.1997.619235

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