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[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (11-15 Aug. 1997)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C - Substrate effects on GaN photodetector performance

✍ Scribed by Smith, G.M.; Redwing, J.M.; Flynn, J.S.; Phanse, V.M.; Vaudo, R.P.

Book ID: 126742562
Publisher: IEEE
Year: 1997
Weight: 95 KB
Category: Article
ISBN-13: 9780780338913
DOI: 10.1109/LEOSST.1997.619243

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