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[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - Influence of neutral hole traps in thin gate oxides on MOS device degradation during Fowler-Nordheim stress

โœ Scribed by Samanta, P.; Sarkar, C.K.


Book ID
126760274
Publisher
IEEE
Year
1995
Tongue
English
Weight
270 KB
Category
Article
ISBN-13
9780780326248

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