[IEEE 1991 Symposium on VLSI Technology - Oiso, Japan (May 28-30, 199)] 1991 Symposium on VLSI Technology - An Ultra-High Emitter Efficiency Transistor with a Low-Temperature Processed Polysilicon Emitter for High-Speed Bipolar Ulsis

✍ Scribed by Kondo, M.; Namba, M.; Kobayashi, T.; Iijima, S.; Nakamura, T.

• Book ID: 125849363
• Publisher: IEEE
• Year: 1991
• Weight: 167 KB
• Category: Article
• DOI: 10.1109/VLSIT.1991.705992