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[IEEE 14th Indium Phosphide and Related Materials Conference (IPRM) - Stockholm, Sweden (12-16 May 2002)] Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) - Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs

✍ Scribed by Shinohara, K.; Yamashita, Y.; Endoh, A.; Hikosaka, K.; Matsui, T.; Hiyamizu, S.; Mimura, T.

Book ID: 126738385
Publisher: IEEE
Year: 2002
Weight: 347 KB
Category: Article
ISBN-13: 9780780373204
DOI: 10.1109/ICIPRM.2002.1014465

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