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[IEEE 13th IEEE International Semiconductor Laser Conference - Kagazwa, Japan (Sept. 21-25, 1992)] 13th IEEE International Semiconductor Laser Conference - High-power Al-free buried InGaAsP/GaAs (λ = 0.8μm) Laser Diodes

✍ Scribed by Garbuzov, D.Z.; Antonishkis, N.Y.; Il'inskaya, N.D.; Zhigulin, S.N.; Katsavets, N.I.; Kochergin, A.V.; Pyataev, V.Z.; Fuksman, M.V.

Book ID: 126745829
Publisher: IEEE
Year: 1992
Weight: 134 KB
Category: Article
ISBN-13: 9784930813510
DOI: 10.1109/ISLC.1992.763647

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