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[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - GaAs MESFET LSI design using E/D-DCFL circuits

✍ Scribed by Onodera, T.; Onodera, H.; Sugisaki, S.; Okamoto, M.; Suyama, K.; Kuryu, I.; Nishi, H.

Book ID: 126766537
Publisher: IEEE
Year: 1990
Weight: 275 KB
Category: Article
DOI: 10.1109/GAAS.1990.175491

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