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[IEEE 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99 - Toronto, Ont., Canada (26-28 May 1999)] 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) - A new model for dopant redistribution in a power SOI structure

✍ Scribed by Ishiyama, T.; Matsumoto, S.; Yachi, T.; Fichtner, W.

Book ID: 126759305
Publisher: IEEE
Year: 1999
Weight: 305 KB
Category: Article
ISBN-13: 9780780352902
DOI: 10.1109/ISPSD.1999.764102

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