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[IEEE 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99 - Toronto, Ont., Canada (26-28 May 1999)] 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) - Characterization of silicon direct bonding methodology for high performance IGBT

✍ Scribed by Tae Hoon Kim, ; Chong Man Yun, ; Soo Seong Kim, ; Hyung Woo Jang,

Book ID: 111689308
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 375 KB
Volume: 0
Category: Article
ISBN-13: 9780780352902
DOI: 10.1109/ispsd.1999.764093

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