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[IEEE 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Nashville, TN, USA (6-9 Nov. 1988)] 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Reduction of the backstage effect in GaAs MESFETS by charge confinement at the backgate electrode

✍ Scribed by Finchem, E.P.; Vetanen, W.A.; Odekirk, B.; Canfield, P.C.

Book ID: 111657847
Publisher: IEEE
Year: 1988
Weight: 255 KB
Volume: 0
Category: Article
DOI: 10.1109/gaas.1988.11064

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