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Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models

✍ Scribed by J David Cohen; Daewon Kwon


Book ID
117148797
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
129 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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