Argon plasma immersion ion implantation
β
A. Kondyurin; B.K. Gan; M.M.M. Bilek; D.R. McKenzie; K. Mizuno; R. Wuhrer
π
Article
π
2008
π
Elsevier Science
π
English
β 843 KB
Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 Γ 10 14 -2 Γ 10 16 ions/cm 2 , was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the