Hydrogenated Amorphous Silicon: Electronic and Transport Properties

✍ Scribed by Jacques I. Pankove (Eds.)

• Publisher: Academic Press
• Year: 1984
• Tongue: English
• Leaves: 433
• Series: Semiconductors and Semimetals 21, Part C
• Category: Library

✦ Table of Contents

Content:
Edited by
Pages ii-iii

Copyright page
Page iv

List of Contributors
Page ix

Foreword
Pages xi-xii
R.K. Willardson, Albert C. Beer

Preface
Page xiii

Chapter 1 Introduction Original Research Article
Pages 1-7
Jacques I. Pankove

Chapter 2 Density of States from Junction Measurements in Hydrogenated Amorphous Silicon Original Research Article
Pages 9-98
J. David Cohen

Chapter 3 Magnetic Resonance Measurements in a-Si:H Original Research Article
Pages 99-154
P.C. Taylor

Chapter 4 Optically Detected Magnetic Resonance Original Research Article
Pages 155-191
K. Morigaki

Chapter 5 Carrier Mobility in a-Si: H Original Research Article
Pages 193-205
J. Dresner

Chapter 6 Information about Band-Tail States from Time-of-Flight Experiments Original Research Article
Pages 207-238
T. Tiedje

Chapter 7 Diffusion Length in Undoped a-Si: H Original Research Article
Pages 239-256
Arnold R. Moore

Chapter 8 Doping Effects in a-Si: H Original Research Article
Pages 257-307
W. Beyer, H. Overhof

Chapter 9 Electronic Properties of Surfaces in a-Si: H Original Research Article
Pages 309-345
H. Fritzsche

Chapter 10 The Staebler-Wronski Effect Original Research Article
Pages 347-374
C.R. Wronski

Chapter 11 Schottky Barriers on a-Si: H Original Research Article
Pages 375-406
R.J. Nemanich

Chapter 12 Amorphous Semiconductor Superlattices Original Research Article
Pages 407-425
B. Abeles, T. Tiedje

Index
Pages 427-432