Hydrogen retention induced by ion implantation in tungsten trioxide films

✍ Scribed by Aichi Inouye; Shunya Yamamoto; Shinji Nagata; Masahito Yoshikawa; Tatsuo Shikama

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 502 KB
• Volume: 267
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2009.01.139

✦ Synopsis

The relation between hydrogen retention and optical properties of an amorphous tungsten trioxide (WO 3 ) film was investigated using 10 keV H þ 2 ion implantation. WO 3 films (350 nm) covered by W layers (200 nm) were deposited on SiO 2 glass substrates by sputtering in a mixture of Ar and O 2 gases. The hydrogen concentration in the WO 3 film was characterized by elastic recoil detection analysis (ERDA). The hydrogen concentration in the WO 3 film increased by 0.4 H/W in proportion to the fluence of the H þ 2 ions implanted into the W layer. The optical absorption coefficient of the film at 750 nm increased linearly by 3 lm À1 with an increase in the concentration of the implanted hydrogen up to 0.1 H/W, and saturated at 4 lm À1 with the concentration higher than 0.1 H/W. These results indicate that the introduced hydrogen up to a hydrogen concentration of 0.1 H/W can be monitored by measuring the optical absorbance in the WO 3 films.