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Hydrogen Passivation of Laser-Induced Acceptor Defects in p-Type Silicon

โœ Scribed by Lawson, E. M. ;Pearton, S. J.


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
169 KB
Volume
72
Category
Article
ISSN
0031-8965

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Hydrogen passivation of P donors and def
โœ N. Fukata; S. Matsushita; T. Tsurui; J. Chen; T. Sekiguchi; N. Uchida; K. Muraka ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 303 KB

Hydrogen passivation of phosphorus (P) donors and defects in P-doped silicon nanowires (SiNWs) were investigated by electron spin resonance (ESR) at 4.2 K. P doping was performed during the synthesis of SiNWs by laser ablation. Phosphorus doping into substitutional sites of crystalline Si in SiNWs w