Hydrogen diffusion in the a-Si-Ge alloy system
β Scribed by W. Beyer; H.C. Weller; U. Zastrow
- Book ID
- 117146929
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 246 KB
- Volume
- 137-138
- Category
- Article
- ISSN
- 0022-3093
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π SIMILAR VOLUMES
The slope of (ahΒ’o) 1/2 vs. hΒ’o depends on the product of the oscillator strength of the transition, the deformation potential and the mean deviation of the atomic coordinates. In a perfect crystal, this deviation is characterized by phonons, whereas in amorphous silicon (a-Si) and amorphous germani
## Abstract A combined study of hydrogenated sputtered single aβSi and aβGe layers and aβSi/aβGe multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single l