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Hydraulic analysis of spillways equipped with bear-trap gates

✍ Scribed by S. S. Obrezkov


Publisher
Springer
Year
1978
Tongue
English
Weight
121 KB
Volume
12
Category
Article
ISSN
1570-1468

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In this study, the interface trap density of metal-oxide-semiconductor (MOS) devices with Pr 2 O 3 gate dielectric deposited on Si is determined by using a conductance method. In order to determine the exact value of the interface trap density, the series resistance is estimated directly from the im