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How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy

✍ Scribed by Daudin, B.; Feuillet, G.; Hübner, J.; Samson, Y.; Widmann, F.; Philippe, A.; Bru-Chevallier, C.; Guillot, G.; Bustarret, E.; Bentoumi, G.; Deneuville, A.


Book ID
127395499
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
484 KB
Volume
84
Category
Article
ISSN
0021-8979

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