Hot electron light-emitting semiconducto
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Rita Gupta; N. Balkan; A. Teke; A. Straw; A. da Cunha
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Article
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1995
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Elsevier Science
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English
⚖ 200 KB
A novel hot electron light-emitting device is proposed which operates by the application of longitudinal electric field, i.e. in the plane of the GaAs quantum wells, which are placed next to the junction plane of an \(\mathrm{n}-\mathrm{Ga}_{1-\mathrm{x}} \mathrm{Al}_{\mathrm{x}} \mathrm{As}-\mathrm