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Hot electron light-emitting and lasing semiconductor heterostructures--type 1

✍ Scribed by A. Straw; N. Balkan; A. O'Brien; A. da Cunha; R. Gupta; M.Ç. Arikan


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
298 KB
Volume
18
Category
Article
ISSN
0749-6036

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Hot electron light-emitting semiconducto
✍ Rita Gupta; N. Balkan; A. Teke; A. Straw; A. da Cunha 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 200 KB

A novel hot electron light-emitting device is proposed which operates by the application of longitudinal electric field, i.e. in the plane of the GaAs quantum wells, which are placed next to the junction plane of an \(\mathrm{n}-\mathrm{Ga}_{1-\mathrm{x}} \mathrm{Al}_{\mathrm{x}} \mathrm{As}-\mathrm