✦ LIBER ✦
Hot-electron induced impact-ionisation damage at the interface of sub-micron silicon MOS devices: Model and monitor
✍ Scribed by A.G.M. Das
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 191 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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