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Hot-electron effects in Silicon-on-insulator n-channel MOSFET's

โœ Scribed by Colinge, J.-P.


Book ID
114596102
Publisher
IEEE
Year
1987
Tongue
English
Weight
460 KB
Volume
34
Category
Article
ISSN
0018-9383

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Interface coupling effects in thin silic
โœ T. Ouisse; S. Cristoloveanu; T. Elewa; B. Boukriss; A. Chovet ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 526 KB

Several experiments converge to demonstrate the strong variation of the front channel properties with the substrate bias in thin film SOI-MOS structures. A model is proposed 'to explain the deformation of the transconductance shape and the variation of its maximum. A related second order effect cons