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Hot electron device monitoring and characterisation: a review

โœ Scribed by Sanchez, J.J.; Hsueh, K.; DeMassa, T.A.


Book ID
114454282
Publisher
The Institution of Electrical Engineers
Year
1988
Weight
518 KB
Volume
135
Category
Article
ISSN
0143-7100

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Hot electron light-emitting semiconducto
โœ Rita Gupta; N. Balkan; A. Teke; A. Straw; A. da Cunha ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 200 KB

A novel hot electron light-emitting device is proposed which operates by the application of longitudinal electric field, i.e. in the plane of the GaAs quantum wells, which are placed next to the junction plane of an \(\mathrm{n}-\mathrm{Ga}_{1-\mathrm{x}} \mathrm{Al}_{\mathrm{x}} \mathrm{As}-\mathrm