Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation

✍ Scribed by Tsuchiya, T.; Kobayashi, T.; Nakajima, S.

• Book ID: 114595892
• Publisher: IEEE
• Year: 1987
• Tongue: English
• Weight: 706 KB
• Volume: 34
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1987.22934