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Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: theory and experiment
✍ Scribed by Quon, D.; Gopi, P.K.; Sonek, G.J.; Li, G.P.
- Book ID
- 114535905
- Publisher
- IEEE
- Year
- 1994
- Tongue
- English
- Weight
- 746 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0018-9383
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