✦ LIBER ✦
Hot-carrier degradation mechanism for p-type symmetric LDMOS transistor with thick gate oxide
✍ Scribed by Qian, Qinsong; Liu, Siyang; Wan, Weijun; Huang, Tingting; Sun, Weifeng
- Book ID
- 121381454
- Publisher
- The Institution of Electrical Engineers
- Year
- 2012
- Tongue
- English
- Weight
- 446 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0013-5194
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